BU2520AX PDF

Dt Sheet. UNIT 6. September 1 Rev 2. UNIT - - 1. September 2 Rev 2. Test circuit for VCEOsust.

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Philips Semiconductors. Silicon Diffused Power Transistor. Product specification. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in. V CESM. V CEO. P tot. V CEsat. I Csat. Collector-emitter voltage peak value. Collector-emitter voltage open base. Collector current DC. Collector current peak value. Total power dissipation. Collector-emitter saturation voltage. Collector saturation current.

Fall time. T stg. Base current DC. Base current peak value. Reverse base current. Reverse base current peak value 1. Storage temperature. Junction temperature. R th j-hs. R th j-a. Junction to heatsink. Junction to ambient. September Rev 2. V isol Repetitive peak voltage from all R. I CES Collector cut-off current 2. I CES. I EBO.

BV EBO. V CEOsust. Emitter cut-off current. Emitter-base breakdown voltage. Collector-emitter sustaining voltage.

V BEsat. Base-emitter saturation voltage. DC current gain. C c Collector capacitance. Switching times 32 kHz line. Switching times 16 kHz line.

September 1 Rev 2. UNIT - 1. September 2 Rev 2.

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